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DRAM

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
MT62F2G32D4DS-023 FAAT:CMicron TechnologyLPDDR5X64Gb2G x324266MHz0.5V-40C to +105C315-ball TFBGAMass Production
MT62F2G64D8EK-023 WT:CMicron TechnologyLPDDR5X128Gb2G x644266MHz0.5V-25C to +85C441-ball TFBGAMass Production
MT62F768M64D4EK-023 AIT:BMicron TechnologyLPDDR5X48Gb768M x644266MHz0.5V-40C to +95C441-ball TFBGAMass Production
MT62F1G64D4AH-023 WT:BMicron TechnologyLPDDR5X64Gb1G x644266MHz0.5V-25C to +85C563-ball WFBGAQualification Sample
MT62F4G32D8DV-023 AAT:BMicron TechnologyLPDDR5X128Gb4G x324266MHz0.5V-40C to +105C315-ball LFBGAMass Production
MT62F1536M32D4DS-023 WT:BMicron TechnologyLPDDR5X48Gb1.5G x324266MHz0.5V-25C to +85C315-ball TFBGAMass Production
MT62F768M64D4EK-023 FAAT:BMicron TechnologyLPDDR5X48Gb768M x644266MHz0.5V-40C to +105C441-ball TFBGAMass Production
H9HCNNN4KUMLHR-NMNSK HynixLPDDR40.5GBx163733Mbps1.8V / 1.1V / 1.1V-40~105C200BallMass Production
H9HCNNN4KUMLHR-NMPSK HynixLPDDR40.5GBx163733Mbps1.8V / 1.1V / 1.1V-40~105C200BallMass Production
H9HCNNN4KUMLHR-NMOSK HynixLPDDR40.5GBx163733Mbps1.8V / 1.1V / 1.1V-40~105C200BallMass Production
H9HCNNN8KUMLHR-NMOSK HynixLPDDR41GBx163733Mbps1.8V / 1.1V / 1.1V-40~105C200BallMass Production
H9HCNNN8KUMLHR-NMNSK HynixLPDDR41GBx163733Mbps1.8V / 1.1V / 1.1V-40~105C200BallMass Production