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DRAM

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
H9HCNNNBKMMLHR-NMNSK HynixLPDDR4X2GBx163733Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H9HCNNNBKMMLHR-NMOSK HynixLPDDR4X2GBx163733Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H54G46BYYPX085SK HynixLPDDR4X2GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H54G46BYYVX085SK HynixLPDDR4X2GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H54G46BYYQX085SK HynixLPDDR4X2GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H9HCNNNCPMMLHR-NMNSK HynixLPDDR4X4GBx163733Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H9HCNNNCPMMLHR-NMOSK HynixLPDDR4X4GBx163733Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H54G56BYYVX089SK HynixLPDDR4X4GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H54G56BYYPX089SK HynixLPDDR4X4GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H54G56BYYQX089SK HynixLPDDR4X4GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C556BallMass Production
H54G66BYYQX104SK HynixLPDDR4X8GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production
H54G66BYYPX104SK HynixLPDDR4X8GBx164266Mbps1.8V / 1.1V / 0.6V-40~105C200BallMass Production