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DRAM

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K3KL5L50CM-BGCUSamsungLPDDR5X128 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3KL4L40DM-BGCUSamsungLPDDR5X96 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3KL3L30QM-JGCTSamsungLPDDR5X64 Gbx647500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃441 FBGASample
K3KL3L30CM-BGCUSamsungLPDDR5X64 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3KL1L10GM-JGCTSamsungLPDDR5X32 Gbx647500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃441 FBGASample
K3KLELE0DM-BGCUSamsungLPDDR5X144 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3KL5L50DM-BGCUSamsungLPDDR5X128 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3KL4L40EM-BGCUSamsungLPDDR5X96 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3KL3L30DM-BGCUSamsungLPDDR5X64 Gbx648533 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
MT61K512M32KPA-16:EMicron TechnologyGDDR616Gb512M x322GHz1.35V-180-ball TFBGAMass Production
MT61K512M32KPA-18:EMicron TechnologyGDDR616Gb512M x322.25GHz1.35V-180-ball TFBGAMass Production
MT61M512M32KPA-14 N:CMicron TechnologyGDDR616Gb512M x321.75GHz1.35V-180-ball TFBGAContact Factory