DRAM | Edal Tech International Limited

DDR HBM GDDR LPDDR MODULE

Part Number	Manufacturer	Technology	Density	Organization	Speed	Voltage	Temperature	Package	Product Status
K4A4G165WE-BITD	Samsung	DDR4	4 Gb	256M x 16	2666 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4A4G165WE-BIRC	Samsung	DDR4	4 Gb	256M x 16	2400 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4A4G165WE-BCTD	Samsung	DDR4	4 Gb	256M x 16	2666 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4A4G165WE-BCRC	Samsung	DDR4	4 Gb	256M x 16	2400 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4A4G165WE-BCPB	Samsung	DDR4	4 Gb	256M x 16	2133 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4A4G085WE-BITD	Samsung	DDR4	4 Gb	512M x 8	2666 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4A4G085WE-BIRC	Samsung	DDR4	4 Gb	512M x 8	2400 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4A4G085WE-BCTD	Samsung	DDR4	4 Gb	512M x 8	2666 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4A4G085WE-BCRC	Samsung	DDR4	4 Gb	512M x 8	2400 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4A4G085WE-BCPB	Samsung	DDR4	4 Gb	512M x 8	2133 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4A4G045WE-BCTD	Samsung	DDR4	4 Gb	1G x 4	2666 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4A4G045WE-BCRC	Samsung	DDR4	4 Gb	1G x 4	2400 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production