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LPDDR

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K4UCE3Q4AB-MGCLSamsungLPDDR4X64 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
MT53E1G64D4SP-046 WT:CMicron TechnologyLPDDR464Gb1G x642133MHz1.1V-25C to +85C556-ball VFBGAMass Production
MT53E512M32D1ZW-046BAAT:BMicron TechnologyLPDDR416Gb512M x322133MHz1.1V-40C to +105C200-ball TFBGAMass Production
MT53E512M64D2NZ-46 WT:BMicron TechnologyLPDDR432Gb512M x642133MHz0.6V-25C to +85C376-ball WFBGAMass Production
MT53E1536M32D4DE-046 AAT:BMicron TechnologyLPDDR448Gb1.5G x322133MHz0.6V-40C to +105C200-ball TFBGAMass Production
MT53D1024M64D8PM-053 WT:DMicron TechnologyLPDDR464Gb1G x641866MHz0.6V-25C to +85C376-ball VFBGAMass Production
MT53E1536M32D4DE-046 AAT:CMicron TechnologyLPDDR448Gb1.5G x322133MHz0.6V-40C to +105C200-ball TFBGAMass Production
MT53E512M32D1ZW-046 AUT:BMicron TechnologyLPDDR416Gb512M x322133MHz1.1V-40C to +125C200-ball TFBGAMass Production
MT53E256M16D1FW-046 WT:BMicron TechnologyLPDDR44Gb256M x162133MHz1.1V-25C to +85C200-ball TFBGAMass Production
MT53E4G32D8GS-046 AIT:CMicron TechnologyLPDDR4128Gb4G x322133MHz1.1V-40C to +95C200-ball LFBGAMass Production
MT53E768M64D4HJ-046 AIT:BMicron TechnologyLPDDR448Gb768M x642133MHz0.6V-40C to +95C556-ball TFBGAMass Production
MT53E256M32D2DS-046 AAT:BMicron TechnologyLPDDR48Gb256M x322133MHz0.6V-40C to +105C200-ball WFBGAMass Production