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UFS

Integrated Circuits DRAM eStorage MCP SSD
UFS eMMC
Part NumberManufacturerTechnologyCapacityInterfaceVoltageTemperaturePackageProduct Status
KLUEG8U1YB-B0CPSamsungUFS 2.1256 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUEG8U1EA-B0C1SamsungUFS 2.1256 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmEOL
KLUDG8J1ZD-B0CQSamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUDG8J1ZD-B0CPSamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUDG4U1YB-B0CQSamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUDG4U1YB-B0CPSamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUDG4U1FB-B0C1SamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmMass Production
KLUDG4U1EA-B0C1SamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmEOL
KLUCG4J1ZD-B0CQSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUCG4J1ZD-B0CPSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUCG4J1ED-B0C1SamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmMass Production
KLUCG2U1YB-B0CQSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production