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DRAM

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K4U8E3S4AD-GFCLSamsungLPDDR4X8 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 95 ℃200 FBGAMass Production
K4UCE3Q4AA-MGCLSamsungLPDDR4X64 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K4UBE3D4AA-MGCLSamsungLPDDR4X32 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K4U6E3S4AA-MGCLSamsungLPDDR4X16 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K3UHBHB0BM-EGCLSamsungLPDDR4X96 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃376 FBGAEOL
K3UHAHA0AM-AGCLSamsungLPDDR4X96 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃556 FBGAEOL
K3UH7H70AM-JGCLSamsungLPDDR4X64 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃432 FBGAMass Production
K3UH7H70AM-EGCLSamsungLPDDR4X64 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃376 FBGAEOL
K3UH6H60BM-EGCLSamsungLPDDR4X48 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃376 FBGAEOL
K3UH5H50AM-JGCLSamsungLPDDR4X32 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃432 FBGAMass Production
K4UCE3Q4AA-MGCRSamsungLPDDR4X64 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K4UBE3D4AA-MGCRSamsungLPDDR4X32 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production