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DRAM

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K4U6E3S4AA-MGCRSamsungLPDDR4X16 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K3UH7H70AM-JGCRSamsungLPDDR4X64 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃432 FBGAMass Production
K3UH5H50AM-JGCRSamsungLPDDR4X32 Gbx644266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃432 FBGAMass Production
K4UBE3D4AB-MGCLSamsungLPDDR4X32 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K4U6E3S4AB-MGCLSamsungLPDDR4X16 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K4UJE3Q4AA-TFCLSamsungLPDDR4X48 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 95 ℃200 FBGAMass Production
K4UJE3D4AA-KUCLSamsungLPDDR4X48 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 125 ℃200 FBGAMass Production
K4U6E3S4AB-KFCLSamsungLPDDR4X16 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 95 ℃200 FBGAMass Production
K3LK4K40BM-CGCNSamsungLPDDR596 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃436 FBGAEOL
K3LK4K40BM-BGCNSamsungLPDDR596 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAEOL
K3LK3K30EM-CGCNSamsungLPDDR564 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃436 FBGAEOL
K3LK3K30EM-BGCNSamsungLPDDR564 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAEOL