DRAM | Edal Tech International Limited

DDR HBM GDDR LPDDR MODULE

Part Number	Manufacturer	Technology	Density	Organization	Speed	Voltage	Temperature	Package	Product Status
K4AAG085WA-BCWE	Samsung	DDR4	16 Gb	2G x 8	3200 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4ABG165WB-MCWE	Samsung	DDR4	32 Gb	2G x 16	3200 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4AAG165WB-BCWE	Samsung	DDR4	16 Gb	4G x 4	3200 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4AAG165WA-BIWE	Samsung	DDR4	16 Gb	1G x 16	3200 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4AAG165WA-BITD	Samsung	DDR4	16 Gb	1G x 16	2666 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4AAG085WB-BCWE	Samsung	DDR4	16 Gb	2G x 8	3200 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4AAG085WA-BIWE	Samsung	DDR4	16 Gb	2G x 8	3200 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4AAG085WA-BITD	Samsung	DDR4	16 Gb	2G x 8	2666 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4A4G165WF-BIWE	Samsung	DDR4	4 Gb	256M x 16	3200 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4A4G165WF-BCWE	Samsung	DDR4	4 Gb	256M x 16	3200 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4A4G085WF-BIWE	Samsung	DDR4	4 Gb	512M x 8	3200 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4A4G085WF-BCWE	Samsung	DDR4	4 Gb	512M x 8	3200 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production