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eStorage

Integrated Circuits DRAM eStorage MCP SSD
UFS eMMC
Part NumberManufacturerTechnologyCapacityInterfaceVoltageTemperaturePackageProduct Status
KLUDG4U1YB-B0CPSamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUDG4U1FB-B0C1SamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmMass Production
KLUDG4U1EA-B0C1SamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmEOL
KLUCG4J1ZD-B0CQSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUCG4J1ZD-B0CPSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUCG4J1ED-B0C1SamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmMass Production
KLUCG2U1YB-B0CQSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUCG2U1YB-B0CPSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUCG2K1EA-B0C1SamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-25 ~ 85 °C11.5 x 13 x 1.0 mmEOL
KLUBG4G1ZF-B0CQSamsungUFS 2.132 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUBG4G1ZF-B0CPSamsungUFS 2.132 GBG3 2Lane1.8 / 3.3 V-40 ~ 85 °C11.5 x 13 x 1.2 mmMass Production
KLUEGAJ1ZD-C0CQSamsungUFS 2.1256 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.72 mmMass Production