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eStorage

Integrated Circuits DRAM eStorage MCP SSD
UFS eMMC
Part NumberManufacturerTechnologyCapacityInterfaceVoltageTemperaturePackageProduct Status
KLUEGAJ1ZD-C0CPSamsungUFS 2.1256 GBG3 2Lane1.8 / 3.3 V-40 ~ 95 °C11.5 x 13 x 1.72 mmMass Production
KLUDG8J1ZD-C0CPSamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-40 ~ 95 °C11.5 x 13 x 1.2 mmMass Production
KLUDG8J1ZD-C0CQSamsungUFS 2.1128 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUCG4J1ZD-C0CPSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 95 °C11.5 x 13 x 1.2 mmMass Production
KLUBG4G1ZF-C0CQSamsungUFS 2.132 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUBG4G1ZF-C0CPSamsungUFS 2.132 GBG3 2Lane1.8 / 3.3 V-40 ~ 95 °C11.5 x 13 x 1.2 mmMass Production
KLUCG4J1ZD-C0CQSamsungUFS 2.164 GBG3 2Lane1.8 / 3.3 V-40 ~ 105 °C11.5 x 13 x 1.2 mmMass Production
KLUFG8RHDA-B2E1SamsungUFS 3.1512 GBG4 2Lane1.2 / 2.5 V-25 ~ 85 °C11.5 x 13 x 1.0 mmMass Production
KLUEG8UHDB-C2E1SamsungUFS 3.1256 GBG4 2Lane1.2 / 2.5 V-25 ~ 85 °C11.5 x 13 x 1.0 mmMass Production
KLUDG4UHDB-B2E1SamsungUFS 3.1128 GBG4 2Lane1.2 / 2.5 V-25 ~ 85 °C11.5 x 13 x 0.8 mmMass Production
KLUFGAUHYB-B0EQSamsungUFS 3.1512 GBG4 2Lane1.2 / 2.5 V-40 ~ 105 °C11.5 x 13 x 1.72 mmMass Production
KLUFGAUHYB-B0EPSamsungUFS 3.1512 GBG4 2Lane1.2 / 2.5 V-40 ~ 95 °C11.5 x 13 x 1.72 mmMass Production