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LPDDR

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K4F8E3S4HD-GHCLSamsungLPDDR48 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production
K4F8E3S4HD-GFCLSamsungLPDDR48 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAMass Production
K4F8E3S4HD-MGCLSamsungLPDDR48 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-25 ~ 85 ℃200 FBGAMass Production
K4F8E304HB-MGCJSamsungLPDDR48 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-25 ~ 85 ℃200 FBGAEOL
K4F6E3S4HM-MGCJSamsungLPDDR416 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-25 ~ 85 ℃200 FBGAMass Production
K4F6E304HB-MGCJSamsungLPDDR416 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-25 ~ 85 ℃200 FBGAEOL
K4FBE3D4HM-THCLSamsungLPDDR432 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production
K4FBE3D4HM-TFCLSamsungLPDDR432 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAMass Production
K4F6E3S4HM-TUCLSamsungLPDDR416 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 125 ℃200 FBGAMass Production
K4F6E3S4HM-THCLSamsungLPDDR416 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production
K4F6E3S4HM-TFCLSamsungLPDDR416 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAMass Production
K4F2E3S4HA-THCLSamsungLPDDR412 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production