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LPDDR

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K4F6E3S4HM-GFCLSamsungLPDDR416 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAMass Production
K4F6E3D4HB-MHCJSamsungLPDDR416 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAEOL
K4F6E3D4HB-MFCJSamsungLPDDR416 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAEOL
K4F4E3S4HF-GUCJSamsungLPDDR44 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 125 ℃200 FBGAMass Production
K4F4E3S4HF-GHCJSamsungLPDDR44 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production
K4F4E3S4HF-GFCJSamsungLPDDR44 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAMass Production
K4F2E3S4HM-MHCJSamsungLPDDR412 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAEOL
K4F2E3S4HM-MFCJSamsungLPDDR412 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAEOL
K4F2E3S4HA-GHCLSamsungLPDDR412 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production
K4F2E3S4HA-GFCLSamsungLPDDR412 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAMass Production
K4F8E3S4HD-GUCLSamsungLPDDR48 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 125 ℃200 FBGAMass Production
K4F8E3S4HD-GHCLSamsungLPDDR48 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production