Product description
The QCN-5021-0-DRQFN100B-TR-01-0 is a high-performance RF (Radio Frequency) front-end integrated circuit (IC) designed for advanced wireless communication systems. It is intended to handle critical RF tasks such as signal amplification, switching, and filtering in communication devices that operate at high frequencies. This IC is packaged in a DRQFN100B (Dual Row Quad Flat No-lead) package, which is optimized for compact and space-efficient designs in applications where high integration and thermal efficiency are essential.
Specification parameters
Frequency Range:
Designed for use in high-frequency communication bands, including:
2.4 GHz and 5 GHz for Wi-Fi and Bluetooth.
Possibly sub-6 GHz bands used in cellular communications (4G/5G).
Supply Voltage (Vcc):
Operates at low voltage levels, typically 1.8V to 3.3V, depending on the specific requirements of the system and application.
Amplification:
LNA Gain: Typically provides a gain of around 10 dB to 30 dB for boosting weak incoming signals with minimal added noise.
PA Gain: Typically 15 dB to 30 dB, ensuring strong transmission of outgoing signals.
Noise Figure (NF):
Low noise figure (1.0 dB to 2.5 dB), which is critical for high-performance reception, ensuring minimal signal degradation in the receive path.
Switching Time:
Fast switching capabilities, typically in the microsecond range, enabling efficient transitions between different signal paths or between transmission and reception modes.
Impedance:
Standard 50-ohm impedance, ensuring compatibility with most antennas and RF systems for minimal signal reflection and loss.
ESD Protection:
Features Electrostatic Discharge (ESD) protection, generally rated between 2 kV and 4 kV, protecting the IC from potential damage during handling and assembly.
Current Consumption:
The IC is optimized for low power consumption, typically in the range of 10 mA to 100 mA, depending on the mode of operation (active or sleep).
