Part Number | Manufacturer | Technology | Density | Organization | Speed | Voltage | Temperature | Package | Product Status |
---|---|---|---|---|---|---|---|---|---|
MT53E2G32D4DE-046 AAT:A | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
MT53E512M32D1ZW-046BWT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball TFBGA | Mass Production |
MT53E1G16D1Z42NWC1MS | Micron Technology | LPDDR4 | 16Gb | 1G x16 | 1.1V | -25C to +85C | - | Mechanical Sample | |
MT53E256M32D2FW-046 AAT:B | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
MT53D512M16D1DS-046 IT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
MT53E1G16D1Z42NWC1 | Micron Technology | LPDDR4 | 16Gb | 1G x16 | 1.1V | -25C to +85C | - | Mass Production | |
MT53E256M16D1FW-046 AAT:B | Micron Technology | LPDDR4 | 4Gb | 256M x16 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
MT53E512M64D4HJ-046 AUT:D | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 1.1V | -40C to +125C | 556-ball TFBGA | Mass Production |
MT53E2G32D4DT-046 AIT:A | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball VFBGA | Mass Production |
MT53E512M64D2HJ-046 AUT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 1.1V | -40C to +125C | 556-ball TFBGA | Mass Production |
MT53D512M16D1DS-046 AIT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
MT53E768M32D4DT-046 AAT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |