Part Number | Manufacturer | Technology | Density | Organization | Speed | Voltage | Temperature | Package | Product Status |
---|---|---|---|---|---|---|---|---|---|
MT53E512M64D2HJ-046 WT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 0.6V | -30C to +85C | 556-ball TFBGA | Mass Production |
MT53E1536M64D8HJ-046 AUT:C | Micron Technology | LPDDR4 | 96Gb | 1.5G x64 | 2133MHz | 0.6V | -40C to +125C | 556-ball TFBGA | Mass Production |
MT53D512M32D2DS-046 AIT:D | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
MT40A4G4Z42BWC1 | Micron Technology | LPDDR4 | 16Gb | 4G x4 | 1.2V | 0C to +95C | - | Mass Production | |
MT53E768M64D4HJ-046 AIT MS:C | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 1.1V | -40C to +95C | 556-ball TFBGA | Mechanical Sample |
MT40A1G16Z42BWC1 | Micron Technology | LPDDR4 | 16Gb | 1G x16 | 1.2V | 0C to +95C | - | Mass Production | |
MT53D512M32D2DS-053 AIT:D | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 1866MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
MT53E768M32D4DT-053 AAT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 1866MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |
MT53E384M32D2FW-046 AIT:E | Micron Technology | LPDDR4 | 12Gb | 384M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
MT53E128M32D2DS-053 AAT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 1866MHz | 1.1V | -40C to +105C | 200-ball WFBGA | Mass Production |
MT53E512M32D1ZW-046BAUT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 0.6V | -40C to +125C | 200-ball TFBGA | Mass Production |
MT53B256M16D1Z00MWC1S | Micron Technology | LPDDR4 | 4Gb | 256M x16 | 1.1V | -30C to +85C | - | Mass Production |