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LPDDR

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
H9HKNNNEBMAVAR-NEHSK HynixLPDDR4X6GBx164266Mbps1.8V / 1.1V / 0.6V-25~105C556BallMass Production
H54G66CYRHX258SK HynixLPDDR4X8GBx164266Mbps1.8V / 1.1V / 0.6V-25~105C556BallCommercial Sample
H9HKNNNFBMMVAR-NEHSK HynixLPDDR4X8GBx164266Mbps1.8V / 1.1V / 0.6V-25~105C556BallMass Production
H9HKNNNFBMAVAR-NEHSK HynixLPDDR4X8GBx164266Mbps1.8V / 1.1V / 0.6V-25~105C556BallMass Production
H54GG6AYRHX263SK HynixLPDDR4X12GBx164266Mbps1.8V / 1.1V / 0.6V-25~105C556BallMass Production
H58GU6MK6HX042SK HynixLPDDR518GBx166400Mbps1.8V / 1.05V / 0.5V-25~105C496BallCommercial Sample
H58GG6MK6GX037SK HynixLPDDR512GBx166400Mbps1.8V / 1.05V / 0.5V-30~105C496BallCommercial Sample
H9JKNNNFB3AECR-N6HSK HynixLPDDR58GBx166400Mbps1.8V / 1.05V / 0.5V-30~105C496BallMass Production
K3QF3F30BM-AGCFSamsungLPDDR316 Gbx641866 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃253 FBGAEOL
K4EBE304ED-EGCGSamsungLPDDR332 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL
K4E8E324ED-EGCGSamsungLPDDR38 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL
K4E6E304ED-EGCGSamsungLPDDR316 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL