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LPDDR

Integrated Circuits DRAM eStorage MCP SSD
DDR HBM GDDR LPDDR MODULE
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K4EBE304EC-EGCGSamsungLPDDR332 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL
K4EBE304EB-EGCGSamsungLPDDR332 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL
K4E8E324EB-EGCGSamsungLPDDR38 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL
K4E6E304EC-EGCGSamsungLPDDR316 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL
K4E6E304EB-EGCGSamsungLPDDR316 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃178 FBGAEOL
K3QF3F30BM-AGCGSamsungLPDDR316 Gbx322133 Mbps1.8 / 1.2 / 1.2 V-25 ~ 85 ℃253 FBGAEOL
K4FHE3D4HM-MHCJSamsungLPDDR424 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAEOL
K4FBE3D4HM-GHCLSamsungLPDDR432 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production
K4FBE3D4HM-GFCLSamsungLPDDR432 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAMass Production
K4F8E3S4HB-MFCJSamsungLPDDR48 Gbx323733 Mbps1.8 / 1.1 / 1.1 V-40 ~ 95 ℃200 FBGAEOL
K4F6E3S4HM-GUCLSamsungLPDDR416 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 125 ℃200 FBGAMass Production
K4F6E3S4HM-GHCLSamsungLPDDR416 Gbx324266 Mbps1.8 / 1.1 / 1.1 V-40 ~ 105 ℃200 FBGAMass Production