Product description
The Qualcomm QPA-8821-3-11ELGA-HR-02-0 is an advanced RF power amplifier designed to meet the demands of modern high-frequency communication systems. Here’s a closer look at its design, functionality, and potential applications:
Design and Materials: The QPA-8821-3-11ELGA-HR-02-0 is built using high-quality semiconductor materials and advanced fabrication techniques. These choices ensure that the amplifier operates efficiently at high frequencies and delivers robust performance. The use of high-grade materials contributes to its low noise figure and high linearity.
Operational Characteristics: The amplifier’s wide frequency range of 3.5 GHz to 4.2 GHz makes it highly versatile, suitable for a range of applications from 5G base stations to advanced radar systems. The high gain and output power ensure that even weak input signals are amplified to a level suitable for high-quality transmission.
Thermal Management: Effective thermal management is a critical feature of this amplifier. The low thermal resistance helps in dissipating heat efficiently, preventing overheating and ensuring consistent performance under demanding conditions. This capability is essential for maintaining the amplifier’s reliability and extending its operational life.
Integration and Packaging: The 11-pin ELGA package provides a compact and efficient solution for integrating the amplifier into electronic systems. The ELGA package format supports reliable electrical connections and allows for a smaller footprint on the PCB, which is advantageous for space-constrained designs.
Applications: The QPA-8821-3-11ELGA-HR-02-0 is ideal for use in high-frequency communication applications, including 5G networks, advanced Wi-Fi systems, and radar technologies. Its high output power and low noise figure make it well-suited for scenarios where signal strength and clarity are paramount.
Reliability and Durability: Designed to operate reliably in various environmental conditions, the QPA-8821-3-11ELGA-HR-02-0 offers durability and consistent performance. Its robust design ensures that it can withstand high-stress conditions and maintain functionality over time.
In summary, the Qualcomm QPA-8821-3-11ELGA-HR-02-0 is a high-performance RF power amplifier that combines advanced features with reliable operation. Its broad frequency range, high gain, and efficient thermal management make it a valuable component for modern communication systems requiring strong amplification and signal integrity.
Specification parameters
Frequency Range: The amplifier operates across a frequency range of 3.5 GHz to 4.2 GHz, making it suitable for high-frequency communication applications such as 5G and advanced radar systems.
Gain: It provides a high gain of approximately 24 dB. This gain level is instrumental in amplifying weak input signals to a higher output level, enhancing the overall performance of the communication system.
Output Power: The QPA-8821-3-11ELGA-HR-02-0 can deliver up to 35 dBm (3.2 watts) of output power. This significant power output is well-suited for applications requiring substantial signal strength and coverage.
Noise Figure: The amplifier features a low noise figure of around 2.0 dB. A low noise figure is critical for ensuring that the amplifier introduces minimal additional noise into the signal, preserving signal quality.
Power Supply Voltage: It operates with a supply voltage in the range of 6V to 12V. This flexibility allows the amplifier to be used in various power management configurations.
Thermal Resistance: The device has a thermal resistance of about 18°C/W, which indicates its effective thermal management capabilities. This feature helps in maintaining stable performance and longevity.
Package Type: The amplifier is housed in an 11-pin ELGA (Enhanced Land Grid Array) package. This packaging format offers reliable electrical performance and efficient use of space on printed circuit boards (PCBs).
