RF IC

WTR-2965-0-59FOWNSP-HR-7-0

  • High Performance: The WTR-2965 is designed to deliver high performance and power efficiency, making it suitable for a wide range of mobile devices.
  • Multi-Band Support: This component supports various frequency bands, including LTE FDD, LTE TDD, WCDMA, and GSM, providing flexibility in network connectivity.

产品描述

The Qualcomm WTR-2965-0-59FOWNSP-HR-07-0 is a high-performance wireless transceiver that supports various frequency bands, including LTE FDD, LTE TDD, WCDMA, and GSM. It integrates a transceiver, synthesizer, and power management circuits, reducing the need for external components and simplifying the design process.


The WTR-2965 supports high data rates, enabling fast download and upload speeds for applications such as video streaming and online gaming. It also supports advanced features such as carrier aggregation, MIMO, and beamforming, enhancing network performance and coverage.


The component has two receive chains and two transmit chains, providing flexibility in network connectivity. It can deliver a maximum output power of +23 dBm (LTE FDD), +20 dBm (LTE TDD), +23 dBm (WCDMA), and +33 dBm (GSM), ensuring reliable connectivity in various network environments.


The WTR-2965 has a typical current consumption of 350 mA (LTE FDD), 400 mA (LTE TDD), 350 mA (WCDMA), and 350 mA (GSM), providing power efficiency and extending battery life in mobile devices. It is available in a 10x10 mm, 121-pin Flip-Chip BGA package, making it suitable for compact mobile devices.


规格参数

  1. Frequency Bands: LTE FDD (B1-B5, B7-B20, B25, B26, B29, B30), LTE TDD (B38, B39, B40, B41), WCDMA (B1-B8), GSM (850/900/1800/1900 MHz)

  2. Transceiver Type: Direct-conversion

  3. Number of Receive Chains: 2

  4. Number of Transmit Chains: 2

  5. Maximum Output Power: +23 dBm (LTE FDD), +20 dBm (LTE TDD), +23 dBm (WCDMA), +33 dBm (GSM)

  6. Maximum Data Rate: 300 Mbps (LTE FDD), 225 Mbps (LTE TDD), 42 Mbps (WCDMA), 5.76 Mbps (GSM)

  7. Power Consumption: Typical current consumption of 350 mA (LTE FDD), 400 mA (LTE TDD), 350 mA (WCDMA), 350 mA (GSM)

  8. Package: 10x10 mm, 121-pin Flip-Chip BGA


外观图

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