RF IC

WTR-2965-0-59FOWNSP-SR-07-0

  • It supports the latest 5G New Radio (NR) standard, as well as legacy 4G LTE and 2G/3G technologies.
  • The chip integrates a comprehensive set of RF front-end components, including power amplifiers, low-noise amplifiers, switches, and filters, enabling a compact and efficient system design.

Product Description

The Qualcomm WTR-2965-0-59FOWNSP-SR-07-0 is a highly advanced RF transceiver chip designed to enable the next generation of 5G cellular devices and infrastructure. It supports the latest 5G NR standard, as well as legacy 4G LTE and 2G/3G technologies, ensuring seamless connectivity across different network environments.


The chip's comprehensive integration of RF front-end components, including power amplifiers, low-noise amplifiers, switches, and filters, allows for a compact and efficient system design. This integration reduces the overall component count and board space required, simplifying the development of high-performance 5G devices.


The WTR-2965-0-59FOWNSP-SR-07-0 features advanced power management and thermal control capabilities, ensuring efficient power consumption and optimal thermal performance. This is crucial for enabling high-performance 5G applications, particularly in mobile and IoT devices, where power efficiency and thermal management are critical.


The chip also includes extensive diagnostic and monitoring capabilities, which facilitate system-level optimization and troubleshooting. This helps device manufacturers and network operators to ensure the optimal performance and reliability of their 5G products and infrastructure.


Overall, the Qualcomm WTR-2965-0-59FOWNSP-SR-07-0 is a highly advanced and versatile RF transceiver chip that enables the development of cutting-edge 5G cellular devices and solutions, supporting the latest 5G NR standard and legacy cellular technologies.


Specification

  • Cellular standards supported: 5G NR, LTE, WCDMA, HSPA, GSM/EDGE

  • Frequency bands: Supports a wide range of frequency bands from 600 MHz to 6 GHz, including sub-6 GHz and mmWave bands

  • Transmit power: Up to 28 dBm for 5G NR and LTE

  • Receiver sensitivity: -99 dBm for 5G NR and -105 dBm for LTE

  • Integrated components: Power amplifiers, low-noise amplifiers, switches, filters, and other RF front-end components

  • Power consumption: Optimized for low power consumption in both active and idle modes

  • Package: 59-pin FOWNSP (Flip-Chip Overmolded Wafer-Level Chip-Scale Package)

  • Operating temperature range: -40°C to +105°C


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